7 results
Properties of GaN Homoepitaxial Layers Grown on GaN Epitaxial Wafers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 451
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- 1998
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Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e3
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- 1997
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Properties of Free-Standing GaN Bulk Crystals Grown by HVPE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 269
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- 1997
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GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 251
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- 1997
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AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 245
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- 1997
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GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e45
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- 1996
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Optical Properties of Nitride-based Structures Grown on 6H-SiC
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e35
- Print publication:
- 1996
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